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LABORATORY OF TERNARY SEMICONDUCTORS
Gmach Mechatroniki, ul. Św. A. Boboli 8, 02-525 Warszawa
STAFF
prof. dr hab.Rajmund Bacewicz, tel.:660 8227, pok.326, bacr@if.pw.edu.pl - head
dr Jerzy Filipowicz, tel.: 660 8231, pok.333, jfil@mech.pw.edu.pl
dr Małgorzata Igalson, tel.: 660 8214, pok.322, igalson@if.pw.edu.pl
mgr inż Andrzej Kubiaczyk,.tel.: 660 8231, pok.333, kuba@mech.pw.edu.pl
prof. dr hab Rajmund Trykozko, tel.: 660 8628, pok.325, trykozko@mech.pw.edu.pl - retired
dr inż. Paweł Zabierowski, tel.: 660 8214, pok.321, zabier@olimp.if.pw.edu.pl
PhD Students:
Michał Ćwil, mgr inż., tel.: 660 8214, pok. 321, cwil@if.pw.edu.pl
Agnieszka Malinowska, mgr inż., tel.: 6608227, pok. 326, malinows@if.pw.edu.pl
Daniel Prządo, mgr inż., tel.: 6608227, pok. 326, daniello@if.pw.edu.pl
Anna Twaróg, mgr inż., tel.: 6608227, pok. 326, twaruk@if.pw.edu.pl
SUBJECT
Properties of AIBIIICVI2 semiconductors
and solar cells based on
CuInSe2 and CdTe absorbers
Materials:
- Crystal growth of semiconductor compounds with chalcopyrite structure (CuInSe2, CuGaSe2, CuInS2 and their solid solutions, In-rich phases in Cu-In-Se system and Schottky barrier technology.
- Atomic and electronic structure as well as lattice dynamics of ternary semiconductors studied by optical methods: absorption, photoluminescence, Raman scattering, synchrotron radiation absorption (XANES, EXAFS).
Recent results:
Extensive study of the X-ray Absorption in CuInSe2 and related materials has been performed in collaboration with synchrotron facilities HASYLAB (Hamburg) and LURE (Orsay). From the near edge structure (XANES) local densities of electronic states have been determined. From extended absorption fine structure (EXAFS) local atomic structure in Cu-In-Se phases (Cu2In4Se7, CuIn3Se5 and CuIn5Se2) have been established.
- Raman spectra of In-rich phases have been measured and analyzed.
- Basic properties of the radiative recombination process in In-rich phases in the Cu-In-Se system have been determined.
Structures: CuInSe2 and CdTe based thin film solar cells and Schottky barriers
Defect physics in photovoltaic materials and structures, in particular determination of the electronic parameters of traps controlling transport and recombination of photocarriers in thin film solar cells.
Experimental techniques (junction techniques): I-V and C-V characteristics, DLTS and Laplace-DLTS spectroscopy, admittance spectroscopy.
Recent results:
- Discovery of the metastable defect states in the photovoltaic devices
based on Cu(In,Ga)Se2
- Differentiation between states at interface and in the bulk of the absorber
COLLABORATION
- HASYLAB-DESY, Hamburg
- LURE, Orsay
- Sheffield Halam University
- Instytut Fizyki PAN
- Institut fur Physikalishe Elektronik, Stuttgart Universitat
- Angstrom Solar Center, Uppsala University
SELECTED PUBLICATIONS
M. Igalson, M. Bodegard, L. Stolt "Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells" Sol. En. Mat & Sol. Cells 80 (2003) 195-207
M. Igalson, P. Zabierowski "Electron traps in Cu(In,Ga)Se2 absorbers of thin film solar cells studied by junction capacitance techniques" Opto-electronics Review 11 (2003) 261-267
R. Bacewicz, J. Filipowicz, S.Podsiadło, T. Szyszko, M. Kamiński "Probing local order in (Ga,Mn)N alloys by X-ray absorption spectroscopy" J. Phys. Chem. Sol. 64 (2003) 1469-72
S. Podsiadlo, T. Szyszko, W. Gębicki, J. Gosk, R. Bacewicz, L. Dobrzycki, K. Woźniak, M. Zajac, A. Twardowski "Synthesis of Bulk Ga1-xMnxN: a Prospective Spintronic Material" Chem. Mater. 15 (2003) 4533-4535
R. Bacewicz, P. Żuk, R. Trykozko "Photoluminescence Study of ZnO/CdS/Cu(In,Ga)Se2 solar cells" Opto-Electronic Review 11 (2003) 277-280
M. Igalson, M. Bodegard, L. Stolt, A. Jasenek "The defected layer and the mechanism of the interface-related metastable behaviour in the ZnO/CdS/Cu(In,Ga)Se2 devices" E-MRS Spring Meeting Strasbourg 2002, Thin Solid Films 431-432 (2003) 153
M. Igalson, M. Bodegard, L. Stolt "Recombination centers in the Cu(In,Ga)Se2 -based photovoltaic devices" J. Phys. Chem. of Solids 64 (2003) 2041-45
R.Lewandowska, R.Bacewicz, J.Filipowicz "EXAFS Study of In-rich Phases in Cu-In-Se System" Crystal Research and Technology 37 (2002) 189
M. Igalson, M. Wimbor, J. Wennerberg "The change of the electronic properties of CIGS devices induced by the "damp heat" treatment" Thin Solid Films 403-404 (2002) 320
A. Wolska, R. Bacewicz, J. Filipowicz and K. Attenkofer "X-ray absorption near edge structure of selenium in the Cu-In-Se system" Journal of Physics: Condensed Matter 13 (2001) 4457
R. Lewandowska, R. Bacewicz, J. Filipowicz, W. Paszkowicz "Raman scattering in a-In2Se3 crystals" Materials Research Bulletin 36 (2001) 2577
M. Igalson, A. Kubiaczyk, P. Zabierowski, M. Bodegard, K. Granath "Electrical characterization of ZnO/CdS/Cu(In,Ga)Se2 devices with controlled sodium content" Thin Solid Films 387 (2001) 225
P. Zabierowski, U. Rau, M. Igalson "Classsification of the metastabilities in the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 devices" Thin Solid Films 387 (2001) 147
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