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LABORATORY OF MIS STRUCTURES
Gmach Fizyki, ul. Koszykowa 75, 00-662 Warszawa
STAFF
prof. dr hab. Ireneusz Strzałkowski, tel.:660 7281, strzalk@if.pw.edu.pl - kierownik
dr Marek Kowalski, tel.: 660 7281, marko@if.pw.edu.pl
SUBJECT
Physics of Metal-Insulator-Semiconductor Structures of MISFET type
Subject is focused on investigation of electronic processes in SiO2 layer and at SiO2 -semiconductor interface: electron and hole trapping, charge emission from traps and generation of trap centres.
Studies are carried out with the use of methods and techniques based on electrical measurements: current - voltage technique (IDS - VSG) with nonavalanche injection of hot carriers into SiO2 (NIHE), isochronal electric field stimulated emission of electrons from trapping centres (IEFSE) technique with electron injection by means of Fowler-Nordheim tunneling (FNTEI), charge pumping technique (CP).
Basing on theoretical analysis of electron and hole trapping/detrapping and trap generation/ annihilation processes the existence of several types of trap centres in investigated amorphous SiO2 layers and at SiO2-Si interfaces has been recorded. The trap concentrations, the capture cross sections, the energy levels, the density of states energy distribution and traps generation rate have been determined.
Analysis of results has been carried out taking into consideration the following processes: band-to-band and trap-to-band collision ionization, tunneling and electric field assisted trap-to-band electron emission, hydrogen groups relaxation and diffusion.
Currently, studies of electronic phenomena in SiO2 layers on SiC substrates and at SiO2-SiC interfaces are planned. Designed structures are presently fabricated in ACREO AB (Sweden).
Studies, being performed, are relevant for the development of silicon microelectronics and advanced high-temperature and high-power semiconductor devices based on SiC.
COOPERATION
- ACREO AB Silicon Carbide Electronics, Kista, Szwecja
SELECTED PUBLICATIONS
S. Podsiadło, T. Szyszko, G. Warso, A. Turos, R. Ratajczak, A. Kowalczyk, W. Gębicki, I. Strzałkowski, D. Grambole, F. Hermann "Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis" Vacuum 70 (2003) 207
C. Jastrzębski, I. Strzałkowski "Reversible and irreversible interface trap centres generated at high electric fields in MOS structures" Microelectronics Reliability 40 (2000) 755-758
I. Strzałkowski, M. Kowalski, "The SiO2 Layer Charge State Variations in the Fowler-Nordheim Tunneling Regime" Acta Physica Polonica A 92 (1997) 585
I. Strzałkowski, M. Kowalski, "Positive and Negative Charge Creation in SiO2 Films of MOS Transistor by High Electric Field Stress" Applied Physics A 63 (1996) 179-182
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